Hot Hardware: TSMC And MIT Research Team Claims Amazing 1nm Chip Fab Breakthrough
Hot Hardware: TSMC And MIT Research Team Claims Amazing 1nm Chip Fab Breakthrough. https://hothardware.com/news/tsmc-and-mit-research-team-claim-1nm-chip-break...
On Saturday, May 22, 2021, 01:53:18 PM PDT, jim bell <jdb10987@yahoo.com> wrote:
Hot Hardware: TSMC And MIT Research Team Claims Amazing 1nm Chip Fab Breakthrough. https://hothardware.com/news/tsmc-and-mit-research-team-claim-1nm-chip-break... Jim Bell's comment:During my time at Intel, July 1980-January 1982, a typical IC feature-size was 2.5 microns. (2,500 nanometers!). And, we thought that was SMALL! It should be remembered that a silicon atom's diameter is 0.20 nanometer. The semiconductor industry is finally approaching the limit we always knew existed: The size of the atoms themselves. Currently, I am promoting my isotope-modified IC components: From high-'k' Hafnium-isotope dielectrics (see daltonium.com), to isotope-modified amorphous Boron Nitride (a-BN) low-'k' insulators. (Samsung missed something: Samsung discovers amorphous boron nitride that could lead semiconductor paradigm shift - Gizmochina )
| | | | | | | | | | | Samsung discovers amorphous boron nitride that could lead semiconductor ... The team at Samsung Advanced Institute of Technology (SAIT) has announced the discovery of new material — amorph... | | | My recent "Hafnium" patent also includes disclosure of an isotope-modified 2-D (2 dimensional) transistor based on Molybdenum Disulfide. Atom-thin transistor uses half the voltage of common semiconductors, boosts current density This has been invented and researched by others, but what they are trying to achieve is a "ballistic transistor", a transistor in whicih electrons 'fly' from the source to the drain of the FET, without hitting or being deflected by the semiconductor material itself. Size Dependence and Ballistic Limits of Thermal Transport in Anisotropic Layered Two-Dimensional Materials | | | | Size Dependence and Ballistic Limits of Thermal Transport in Anisotropic... Layered materials have uncommonly anisotropic thermal properties due to their strong in-plane covalent bonds and... | | | | | | | | | | | | | | Atom-thin transistor uses half the voltage of common semiconductors, boo... University at Buffalo researchers report a new, two-dimensional transistor made of graphene and molybdenum disul... | | | Molybdenum-Disulfide 2D Transistors Go Ballistic | | | | | | | | | | | Molybdenum-Disulfide 2D Transistors Go Ballistic 2D nanomaterial pulls ahead with working registers and latch circuits and devices that let electrons zip through... | | | Are Silicon Computer Chips a Thing of the Past? Maybe, if Molybdenum Disulfide Transistors Take Over - My TechDecisions | | | | | | | | | | | Are Silicon Computer Chips a Thing of the Past? Maybe, if Molybdenum Dis... Will molybdenum disulfide transistors surpass silicon as the preferred material to form computer chips? Research... | | | What these researchers don't understand, until I just told a couple of them a few days ago, is that the magnetic field generated by the 'spin' of the isotopes deflects those flying electrons, so the transistor won't behave ballistically. My invention, an addition to this idea of a 2-dimensional transistor, is that some or all of the isotopes making up these transistors that have 'spin' are removed: Mo-95, Mo-97, S-33, Se-77.
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jim bell