> Hot Hardware: TSMC And MIT Research Team Claims Amazing 1nm Chip Fab Breakthrough.
> https://hothardware.com/news/tsmc-and-mit-research-team-claim-1nm-chip-breakthrough

Jim Bell's comment:

During my time at Intel, July 1980-January 1982, a typical IC feature-size was 2.5 microns.  (2,500 nanometers!).  And, we thought that was SMALL!

It should be remembered that a silicon atom's diameter is 0.20 nanometer.  The semiconductor industry is finally approaching the limit we always knew existed:  The size of the atoms themselves.  

Currently, I am promoting my isotope-modified IC components:  From high-'k' Hafnium-isotope dielectrics (see daltonium.com), to isotope-modified amorphous Boron Nitride (a-BN) low-'k' insulators. (Samsung missed something:   Samsung discovers amorphous boron nitride that could lead semiconductor paradigm shift - Gizmochina   )

My recent "Hafnium" patent also includes disclosure of an isotope-modified 2-D (2 dimensional) transistor based on Molybdenum Disulfide.  Atom-thin transistor uses half the voltage of common semiconductors, boosts current density  This has been invented and researched by others, but what they are trying to achieve is a "ballistic transistor", a transistor in whicih electrons 'fly' from the source to the drain of the FET, without hitting or being deflected by the semiconductor material itself.  Size Dependence and Ballistic Limits of Thermal Transport in Anisotropic Layered Two-Dimensional Materials

What these researchers don't understand, until I just told a couple of them a few days ago, is that the magnetic field generated by the 'spin' of the isotopes deflects those flying electrons, so the transistor won't behave ballistically.  My invention, an addition to this idea of a 2-dimensional transistor, is that some or all of the isotopes making up these transistors that have 'spin' are removed:   Mo-95, Mo-97, S-33, Se-77.