Many companies(Like Intel) are currently using hafnium oxide to replace
   silicon dioxide in transistors, due to its high ratio of electric
   displacement in a medium to the intensity of the electric field
   producing it, known as a dielectric constant.

   [1]https://hardware.slashdot.org/story/21/03/25/1930258/samsung-unveils
   -512gb-ddr5-ram-module

   Hafnium used as a dielectric in intel's chips

   Açık Çar, Kas 10, 2021 01:16, jim bell <[2]jdb10987@yahoo.com> yazdı:

   This includes the notification of the publication of the patent
   application for the isotopic hafnium dielectric patent.
   Instead of using ordinary hafnium in the dielectric under the gates of
   MOSFET transistors, Hf-177 or Hf-179 isotope hafnium can be used, to
   increase its dielectric constant.
   This will enable the thickening of the dielectric layer from 1.2
   nanometers, yet maintain sufficient gate authority.  This will enable
   the continuing shrinkage of feature sizes in cutting-edge IC's.
   See:.  [3]https://daltonium.com/

   F    Jim Bell's new patent application.

   ----- Forwarded Message -----
   From: "Daltonium Isotopics" <daltoniumisotopics@gmail.com>
   To: "jdb10987@yahoo.com" <jdb10987@yahoo.com>
   Cc:
   Sent: Tue, Nov 9, 2021 at 1:56 PM
   Subject: Fwd: Notice of Publication for U.S. Patent Application No.
   17/232,016; Our Ref. DAL21301
   ---------- Forwarded message ---------
   From: (snip)
   Date: Mon, Nov 8, 2021, 3:36 PM
   Subject: Notice of Publication for U.S. Patent Application No.
   17/232,016; Our Ref. DAL21301
   To: [4]daltoniumisotopics@gmail.com
   (Snip)


   Re:

   U.S. Utility Patent Application No. 17/232,016

   Title: ISOTOPE-MODIFIED HAFNIUM AND SEMICONDUCTOR DIELECTRICS

   Our Ref. DAL21301


   Good afternoon,


   The Notice of Publication of Application has been received from the
   United States Patent and Trademark Office, informing us that the
   above-identified patent application was published on October 28, 2021,
   under Publication Number US-2021-0336027-A1. Copies of the Notice of
   Publication and the published application are attached for your
   records.


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References

   1. https://hardware.slashdot.org/story/21/03/25/1930258/samsung-unveils-512gb-ddr5-ram-module
   2. mailto:jdb10987@yahoo.com
   3. https://daltonium.com/
   4. mailto:daltoniumisotopics@gmail.com