Notice of Publication for U.S. Patent Application No. 17/232,016; Jim Bell

[zeynepaydogan]

Many companies(Like Intel) are currently using hafnium oxide to replace silicon dioxide in transistors, due to its high ratio of electric displacement in a medium to the intensity of the electric field producing it, known as a dielectric constant.

https://hardware.slashdot.org/story/21/03/25/1930258/samsung-unveils-512gb-ddr5-ram-module

Hafnium used as a dielectric in intel's chips

Açık Çar, Kas 10, 2021 01:16, jim bell <jdb10987 at yahoo.com> yazdı:

> This includes the notification of the publication of the patent application for the isotopic hafnium dielectric patent.
>
> Instead of using ordinary hafnium in the dielectric under the gates of MOSFET transistors, Hf-177 or Hf-179 isotope hafnium can be used, to increase its dielectric constant.
>
> This will enable the thickening of the dielectric layer from 1.2 nanometers, yet maintain sufficient gate authority. This will enable the continuing shrinkage of feature sizes in cutting-edge IC's.
>
> See:. https://daltonium.com/
>
> F Jim Bell's new patent application.
>
>> ----- Forwarded Message -----
>> From: "Daltonium Isotopics" <daltoniumisotopics at gmail.com>
>> To: "jdb10987 at yahoo.com" <jdb10987 at yahoo.com>
>> Cc:
>> Sent: Tue, Nov 9, 2021 at 1:56 PM
>> Subject: Fwd: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301
>>
>> ---------- Forwarded message ---------
>> From: (snip)
>> Date: Mon, Nov 8, 2021, 3:36 PM
>> Subject: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301
>> To: daltoniumisotopics at gmail.com
>>
>> (Snip)
>>
>> Re:
>>
>> U.S. Utility Patent Application No. 17/232,016
>>
>> Title: ISOTOPE-MODIFIED HAFNIUM AND SEMICONDUCTOR DIELECTRICS
>>
>> Our Ref. DAL21301
>>
>> Good afternoon,
>>
>> The Notice of Publication of Application has been received from the United States Patent and Trademark Office, informing us that the above-identified patent application was published on October 28, 2021, under Publication Number US-2021-0336027-A1. Copies of the Notice of Publication and the published application are attached for your records.
>>
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