Notice of Publication for U.S. Patent Application No. 17/232,016; Jim Bell

[jim bell]

This includes the notification of the publication of the patent application for the isotopic hafnium dielectric patent. 

Instead of using ordinary hafnium in the dielectric under the gates of MOSFET transistors, Hf-177 or Hf-179 isotope hafnium can be used, to increase its dielectric constant.
This will enable the thickening of the dielectric layer from 1.2 nanometers, yet maintain sufficient gate authority.  This will enable the continuing shrinkage of feature sizes in cutting-edge IC's.
See:.  https://daltonium.com/

F    Jim Bell's new patent application.
 
 
   ----- Forwarded Message ----- From: "Daltonium Isotopics" <daltoniumisotopics at gmail.com> To: "jdb10987 at yahoo.com" <jdb10987 at yahoo.com> Cc:  Sent: Tue, Nov 9, 2021 at 1:56 PM Subject: Fwd: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301  

---------- Forwarded message ---------
From: (snip)
Date: Mon, Nov 8, 2021, 3:36 PM
Subject: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301
To: daltoniumisotopics at gmail.com 

(Snip)


 

| 
Re:
 | 
U.S. Utility Patent Application No. 17/232,016

Title: ISOTOPE-MODIFIED HAFNIUM AND SEMICONDUCTOR DIELECTRICS

Our Ref.DAL21301
 |


 

Good afternoon,

 

The Notice of Publication of Application has been received from the United States Patent and Trademark Office, informing us that the above-identified patent application was published on October 28, 2021, under Publication Number US-2021-0336027-A1. Copies of the Notice of Publication and the published application are attached for your records.

 

We will be separately sending you our invoice for services rendered.  Please contact us(or Doug Wells, directly at 503-866-2749) if you have any questions or if we may be of further assistance.

 

Best regards,

 

Chloe Mike | On Behalf of McCoy Russell LLP

Legal Assistant

1410 




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