Notice of Publication for U.S. Patent Application No. 17/232,016; Jim Bell
This includes the notification of the publication of the patent application for the isotopic hafnium dielectric patent. Instead of using ordinary hafnium in the dielectric under the gates of MOSFET transistors, Hf-177 or Hf-179 isotope hafnium can be used, to increase its dielectric constant. This will enable the thickening of the dielectric layer from 1.2 nanometers, yet maintain sufficient gate authority. This will enable the continuing shrinkage of feature sizes in cutting-edge IC's. See:. https://daltonium.com/ F Jim Bell's new patent application. ----- Forwarded Message ----- From: "Daltonium Isotopics" <daltoniumisotopics@gmail.com> To: "jdb10987@yahoo.com" <jdb10987@yahoo.com> Cc: Sent: Tue, Nov 9, 2021 at 1:56 PM Subject: Fwd: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301 ---------- Forwarded message --------- From: (snip) Date: Mon, Nov 8, 2021, 3:36 PM Subject: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301 To: daltoniumisotopics@gmail.com (Snip) | Re: | U.S. Utility Patent Application No. 17/232,016 Title: ISOTOPE-MODIFIED HAFNIUM AND SEMICONDUCTOR DIELECTRICS Our Ref.DAL21301 | Good afternoon, The Notice of Publication of Application has been received from the United States Patent and Trademark Office, informing us that the above-identified patent application was published on October 28, 2021, under Publication Number US-2021-0336027-A1. Copies of the Notice of Publication and the published application are attached for your records. We will be separately sending you our invoice for services rendered. Please contact us(or Doug Wells, directly at 503-866-2749) if you have any questions or if we may be of further assistance. Best regards, Chloe Mike | On Behalf of McCoy Russell LLP Legal Assistant 1410 (Snip)
Many companies(Like Intel) are currently using hafnium oxide to replace silicon dioxide in transistors, due to its high ratio of electric displacement in a medium to the intensity of the electric field producing it, known as a dielectric constant. https://hardware.slashdot.org/story/21/03/25/1930258/samsung-unveils-512gb-d... Hafnium used as a dielectric in intel's chips Açık Çar, Kas 10, 2021 01:16, jim bell <jdb10987@yahoo.com> yazdı:
This includes the notification of the publication of the patent application for the isotopic hafnium dielectric patent.
Instead of using ordinary hafnium in the dielectric under the gates of MOSFET transistors, Hf-177 or Hf-179 isotope hafnium can be used, to increase its dielectric constant.
This will enable the thickening of the dielectric layer from 1.2 nanometers, yet maintain sufficient gate authority. This will enable the continuing shrinkage of feature sizes in cutting-edge IC's.
See:. https://daltonium.com/
F Jim Bell's new patent application.
----- Forwarded Message ----- From: "Daltonium Isotopics" <daltoniumisotopics@gmail.com> To: "jdb10987@yahoo.com" <jdb10987@yahoo.com> Cc: Sent: Tue, Nov 9, 2021 at 1:56 PM Subject: Fwd: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301
---------- Forwarded message --------- From: (snip) Date: Mon, Nov 8, 2021, 3:36 PM Subject: Notice of Publication for U.S. Patent Application No. 17/232,016; Our Ref. DAL21301 To: daltoniumisotopics@gmail.com
(Snip)
Re:
U.S. Utility Patent Application No. 17/232,016
Title: ISOTOPE-MODIFIED HAFNIUM AND SEMICONDUCTOR DIELECTRICS
Our Ref. DAL21301
Good afternoon,
The Notice of Publication of Application has been received from the United States Patent and Trademark Office, informing us that the above-identified patent application was published on October 28, 2021, under Publication Number US-2021-0336027-A1. Copies of the Notice of Publication and the published application are attached for your records.
We will be separately sending you our invoice for services rendered. Please contact us(or Doug Wells, directly at 503-866-2749) if you have any questions or if we may be of further assistance.
Best regards,
Chloe Mike | On Behalf of McCoy Russell LLP
Legal Assistant
1410
(Snip)
On 11/9/21, jim bell <jdb10987@yahoo.com> wrote:
Another fun patent / application. Now the trick is how to translate the foul non-Libertarian Queen's Patent of Govt, into a voluntary Libertarian society. Anyone could register ideas on any blockchain. The invention would surely be copied and used with few if any actionables possible within greater actual freedom. But truly licensed licensing, if anyone bothered to seek such a thing, could be enforced, but by what, prediction market bounty hunters, lol. The more likely future is reversion to private sponsors patrons of artists, inventors, etc... a form of voluntary mutually beneficial and protective arrangement. And the potential for DAO versions of that. Drawback there is the default to non open publication, thus as in medieval times, potentially slower or costlier mashups of all available tech occurring to create new tech. So then there is reputational value, inventions being open and essentially worthless, but the inventors being highly prized and compensated for generating first access to new things. ratbats can troll away as usual.
On Fri, 12 Nov 2021 23:44:08 -0500 grarpamp <grarpamp@gmail.com> wrote:
On 11/9/21, jim bell <jdb10987@yahoo.com> wrote:
Another fun patent / application. Now the trick is how to translate the foul non-Libertarian Queen's Patent of Govt, into a voluntary Libertarian society.
worthless piece of US fascist shit grarpamp keeps promoting fascism and calling it 'libertarian' hey turd go defend the 'mexican' border, you thieving piece of shit.
participants (5)
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grarpamp
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jdb10987@yahoo.com
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jim bell
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Punk-BatSoup-Stasi 2.0
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zeynepaydogan