7 Nov
2003
7 Nov
'03
1:05 a.m.
"Major Variola (ret)" <mv@cdc.gov> wrote:
At 08:22 PM 11/6/03 -0800, Tim May wrote:
I heard ten years ago that the National Semi fab on-site was a lowly 2-micron fab. Which was enough for keying material.
And rad-hard circuits for their buddies at the NRO.
Probably not on a CMOS process, though. For the most part, rad-hard==bipolar, even nowadays. -- Riad Wahby rsw@jfet.org MIT VI-2 M.Eng